类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 100 V |
电流 - 连续漏极 (id) @ 25°c: | 3.5A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 600mOhm @ 2.25A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 8.1 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | 800mW (Ta), 15W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-39 |
包/箱: | TO-205AF Metal Can |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BS108/01,126NXP Semiconductors |
MOSFET N-CH 200V 300MA TO92-3 |
|
FQPF11N40CTSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 400V 10.5A TO220F |
|
HUFA75339S3SSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 55V 75A D2PAK |
|
IRF1010NSPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 85A D2PAK |
|
IPB06CN10N GIR (Infineon Technologies) |
MOSFET N-CH 100V 100A D2PAK |
|
PHM30NQ10T,518NXP Semiconductors |
MOSFET N-CH 100V 37.6A 8HVSON |
|
IRFL014Vishay / Siliconix |
MOSFET N-CH 60V 2.7A SOT223 |
|
IXTH48N20TWickmann / Littelfuse |
MOSFET N-CH 200V 48A TO247 |
|
PSMN014-60LS,115NXP Semiconductors |
MOSFET N-CH 60V 40A 8DFN |
|
IRFNL210BTA-FP001Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 1A TO92L |
|
IRFR12N25DCPBFIR (Infineon Technologies) |
MOSFET N-CH 250V 14A DPAK |
|
SI1433DH-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 1.9A SC70-6 |
|
IXFH76N07-12Wickmann / Littelfuse |
MOSFET N-CH 70V 76A TO247AD |