English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | OptiMOS™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 100A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 6V, 10V |
| rds on (max) @ id, vgs: | 4.5mOhm @ 100A, 10V |
| vgs(th) (最大值) @ id: | 3.5V @ 150µA |
| 栅极电荷 (qg) (max) @ vgs: | 117 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 8410 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 214W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | PG-TO220-3 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AOL1242Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 40V 14A/69A ULTRASO8 |
|
SIA408DJ-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 4.5A PPAK SC70-6 |
|
FDJ128NSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 5.5A SC75-6 FLMP |
|
AON6372Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 47A 8DFN |
|
SI2311DS-T1-GE3Vishay / Siliconix |
MOSFET P-CH 8V 3A SOT23-3 |
|
BSS119E6327IR (Infineon Technologies) |
MOSFET N-CH 100V 170MA SOT23-3 |
|
BUK75150-55A,127NXP Semiconductors |
MOSFET N-CH 55V 11A TO220AB |
|
2SJ438,Q(MToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH TO220NIS |
|
IPD65R380E6BTMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 10.6A TO252-3 |
|
IRFS4510PBFIR (Infineon Technologies) |
MOSFET N-CH 100V 61A D2PAK |
|
STD80N6F6STMicroelectronics |
MOSFET N-CH 60V 80A DPAK |
|
SI7100DN-T1-E3Vishay / Siliconix |
MOSFET N-CH 8V 35A PPAK1212-8 |
|
STI14NM65NSTMicroelectronics |
MOSFET N-CH 650V 12A I2PAK |
