English
简体中文
MOSFET N-CH 60V 9A DPAK
CBL 2COND 24AWG SHLD 1000=1000'
XTAL OSC XO 700.0000MHZ LVDS SMD
RSPA 4-RKPA 4-805/25M
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 9A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 150mOhm @ 4.5A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 15 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 280 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.5W (Ta), 28.8W (Tj) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DPAK |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
2SK3748-1ESanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 1500V 4A TO3PF-3 |
|
STP6N52K3STMicroelectronics |
MOSFET N-CH 525V 5A TO220 |
|
PSMN005-55B,118NXP Semiconductors |
MOSFET N-CH 55V 75A D2PAK |
|
IRFI9630GVishay / Siliconix |
MOSFET P-CH 200V 4.3A TO220-3 |
|
NTB5605T4GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 18.5A D2PAK |
|
IRFPF30Vishay / Siliconix |
MOSFET N-CH 900V 3.6A TO247-3 |
|
BSS127L6327HTSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 21MA SOT23-3 |
|
SIR892DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 25V 50A PPAK SO-8 |
|
AOD421Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 20V 12.5A TO252 |
|
IRF730ASTRLVishay / Siliconix |
MOSFET N-CH 400V 5.5A D2PAK |
|
IPD20N03L GIR (Infineon Technologies) |
MOSFET N-CH 30V 30A TO252-3 |
|
RJK1003DPN-E0#T2Renesas Electronics America |
MOSFET N-CH 100V 50A TO220AB |
|
FDB12N50UTM_WSSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 10A D2PAK |