English
简体中文
RES 80.6K OHM 1/4W .1% AXIAL
MOSFET N-CH 40V 42A DPAK
DC DC CONVERTER 28V 50W
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 42A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 5.5mOhm @ 42A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 89 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2950 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 140W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-Pak |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFU13N20DPBFIR (Infineon Technologies) |
MOSFET N-CH 200V 13A IPAK |
|
STB120N10F4STMicroelectronics |
MOSFET N-CH 100V D2PAK |
|
PHP52N06T,127NXP Semiconductors |
MOSFET N-CH 60V 52A TO220AB |
|
IRL3714ZIR (Infineon Technologies) |
MOSFET N-CH 20V 36A TO220AB |
|
IRFSL59N10DIR (Infineon Technologies) |
MOSFET N-CH 100V 59A TO262 |
|
IXFT60N25QWickmann / Littelfuse |
MOSFET N-CH 250V 60A TO268 |
|
STW28NK60ZSTMicroelectronics |
MOSFET N-CH 600V 27A TO247-3 |
|
FQP32N20C_F080Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 28A TO220-3 |
|
N0439N-S19-AYRenesas Electronics America |
MOSFET N-CH 40V 90A TO220 |
|
94-2989IR (Infineon Technologies) |
MOSFET N-CH 55V 64A D2PAK |
|
APT20F50BMicrosemi |
MOSFET N-CH 500V 20A TO247 |
|
IXFK150N15Wickmann / Littelfuse |
MOSFET N-CH 150V 150A TO264AA |
|
BUK7907-55ATE,127Nexperia |
MOSFET N-CH 55V 75A TO220-5 |