类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 2.2A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 4.4Ohm @ 1.3A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 18 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 350 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 3.1W (Ta), 50W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | D2PAK |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
STB80NE03L-06T4STMicroelectronics |
MOSFET N-CH 30V 80A D2PAK |
|
BSC085N025S GIR (Infineon Technologies) |
MOSFET N-CH 25V 14A/35A TDSON |
|
SI5402DC-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 4.9A 1206-8 |
|
IRF1010ZLPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 75A TO262 |
|
IPA50R650CEIR (Infineon Technologies) |
MOSFET N-CH 500V 6.1A TO220-FP |
|
IXTA152N085TWickmann / Littelfuse |
MOSFET N-CH 85V 152A TO263 |
|
STP14NF12STMicroelectronics |
MOSFET N-CH 120V 14A TO220-3 |
|
SFT1443-TL-HSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 9A DPAK/TP-FA |
|
IPU105N03L GIR (Infineon Technologies) |
MOSFET N-CH 30V 35A TO251-3 |
|
IRFR120TRLVishay / Siliconix |
MOSFET N-CH 100V 7.7A DPAK |
|
STL80N4LLF3STMicroelectronics |
MOSFET N-CH 40V 80A POWERFLAT |
|
IRFR9014NTRLVishay / Siliconix |
MOSFET P-CH 60V 5.1A DPAK |
|
ZXMP6A17N8TCZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 60V 2.7A 8SO |