English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 450 V |
| 电流 - 连续漏极 (id) @ 25°c: | 9.5A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 630mOhm @ 5.7A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 80 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1400 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 150W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247-3 |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
HUFA76423S3STSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 35A D2PAK |
|
STB16PF06LT4STMicroelectronics |
MOSFET P-CH 60V 16A D2PAK |
|
NP80N055MHE-S18-AYRenesas Electronics America |
MOSFET N-CH 55V 80A TO220-3 |
|
IRL8113SPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 105A D2PAK |
|
SI1069X-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 0.94A SC89-6 |
|
STL150N3LLH6STMicroelectronics |
MOSFET N-CH 30V 150A POWERFLAT |
|
IRF2903ZSTRRPIR (Infineon Technologies) |
MOSFET N-CH 30V 75A D2PAK |
|
FDPF12N50NZTSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 11.5A TO220F |
|
BUK7628-55A,118NXP Semiconductors |
MOSFET N-CH 55V 42A D2PAK |
|
STS6PF30LSTMicroelectronics |
MOSFET P-CH 30V 6A 8SO |
|
NTD4960NT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 8.9A/55A DPAK |
|
NTF3055-100T3LFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 3A SOT223 |
|
IPUH6N03LB GIR (Infineon Technologies) |
MOSFET N-CH 30V 50A TO251-3 |
