English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchMOS™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 75A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 2.8mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 93.6 nC @ 5 V |
| vgs (最大值): | ±15V |
| 输入电容 (ciss) (max) @ vds: | 7880 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 300W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SIR330DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 35A PPAK SO-8 |
|
APT94N65B2C3GMicrosemi |
MOSFET N-CH 650V 94A T-MAX |
|
HAT2096H-EL-ERenesas Electronics America |
MOSFET N-CH 30V 40A LFPAK |
|
IRFP354Vishay / Siliconix |
MOSFET N-CH 450V 14A TO247-3 |
|
AOTF10T60PLAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 10A TO220F |
|
2SK4065-DL-1ESanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 75V 100A TO263-2 |
|
BUK7505-30A,127NXP Semiconductors |
MOSFET N-CH 30V 75A TO220AB |
|
2SK354700LPanasonic |
MOSFET N-CH 50V 100MA SSSMINI3 |
|
IRF3704ZSTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 67A D2PAK |
|
IRL3302STRRIR (Infineon Technologies) |
MOSFET N-CH 20V 39A D2PAK |
|
SI7620DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 150V 13A PPAK1212-8 |
|
IRF6645TR1PBFIR (Infineon Technologies) |
MOSFET N-CH 100V 5.7A DIRECTFET |
|
IPD60R380P6BTMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 10.6A TO252-3 |
