类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 3.6A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 2.2Ohm @ 2.2A, 10V |
vgs(th) (最大值) @ id: | 4.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 23 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 510 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 74W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | I2PAK |
包/箱: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
IRFR9024NPBFIR (Infineon Technologies) |
MOSFET P-CH 55V 11A DPAK |
![]() |
IRFZ48STRLVishay / Siliconix |
MOSFET N-CH 60V 50A D2PAK |
![]() |
SSM6J53FE(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 1.8A ES6 |
![]() |
2SK3670(F,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH TO92MOD |
![]() |
BUK9E06-55A,127Nexperia |
MOSFET N-CH 55V 75A I2PAK |
![]() |
IRL1004LIR (Infineon Technologies) |
MOSFET N-CH 40V 130A TO262 |
![]() |
BUK9GTHP-55PJTR,51Nexperia |
MOSFET N-CH 55V 28SO |
![]() |
UPA2738GR-E1-AXRenesas Electronics America |
MOSFET P-CH 30V 10A 8SOP |
![]() |
PSMN9R0-30LL,115NXP Semiconductors |
MOSFET N-CH 30V 21A 8DFN |
![]() |
IRFR320TRVishay / Siliconix |
MOSFET N-CH 400V 3.1A DPAK |
![]() |
NTMFS4897NFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 17A/171A 5DFN |
![]() |
FDMS86568-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 80A POWER56 |
![]() |
IPUH6N03LA GIR (Infineon Technologies) |
MOSFET N-CH 25V 50A TO251-3 |