English
简体中文
MOSFET N-CH 30V 12.5A TO252
BIT SKT VRTX 1/4DR SLT 1/8
MEMS OSC LP 129.6MHZ LVCMOS -40C
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 12.5A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 50mOhm @ 8A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 7 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 270 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 12.5W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-252, (D-Pak) |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFR9N20DTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 200V 9.4A DPAK |
|
FQD13N10LTM_NBEL001Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 10A DPAK |
|
FQB4N25TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 3.6A D2PAK |
|
IXFX14N100Wickmann / Littelfuse |
MOSFET N-CH 1000V 14A PLUS247-3 |
|
FCD5N60TFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 4.6A DPAK |
|
IXFT13N100Wickmann / Littelfuse |
MOSFET N-CH 1000V 12.5A TO268 |
|
FDMJ1027PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 3.2A 6MICROFET |
|
IRFB17N50LVishay / Siliconix |
MOSFET N-CH 500V 16A TO220AB |
|
GA16JT17-247GeneSiC Semiconductor |
TRANS SJT 1700V 16A TO247AB |
|
PSMN8R5-100PSFQNexperia |
MOSFET N-CH 100V 98A TO220AB |
|
ZVN4206GVTCZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 1A SOT223 |
|
IRFBF30STRRVishay / Siliconix |
MOSFET N-CH 900V 3.6A D2PAK |
|
IPD90N06S407ATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 90A TO252-3 |