M55342E 25PPM 0705 49.9 1% S WS
SWITCH LIMIT HAZARDOUS LOCATION
MOSFET N-CH 60V 6A/19A 8WDFN
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 6A (Ta), 19A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 29.7mOhm @ 3A, 10V |
vgs(th) (最大值) @ id: | 4V @ 13µA |
栅极电荷 (qg) (max) @ vgs: | 4.7 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 255 pF @ 30 V |
场效应管特征: | - |
功耗(最大值): | 2.5W (Ta), 23W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-WDFN (3.3x3.3) |
包/箱: | 8-PowerWDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
NVTFS052P04M8LTAGSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 40V 4.7A/13.2A 8WDFN |
![]() |
2SK2364(1)-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
2SK2723-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
IRF621Rochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
HAF1004-90STLRochester Electronics |
P-CHANNEL POWER MOSFET |
![]() |
MCAC90N04-TPMicro Commercial Components (MCC) |
N-CHANNEL MOSFET, DFN5060 |
![]() |
HAT1130RWS-ERochester Electronics |
P-CHANNEL POWER MOSFET |
![]() |
SQJ433EP-T1_GE3Vishay / Siliconix |
MOSFET P-CH 30V 75A PPAK SO-8 |
![]() |
MTB75N06HDRochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
DMN2053UW-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 8V~24V SOT323 |
![]() |
NX5008NBKHHNexperia |
MOSFET N-CH 50V 350MA DFN0606-3 |
![]() |
IRFP450RRochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
PMV50XNEARNexperia |
PMV50XNEA - 30 V, N-CHANNEL TREN |