类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
TK20E60W5,S1VXToshiba Electronic Devices and Storage Corporation |
X35 PB-F POWER MOSFET TRANSISTOR |
![]() |
SSM3J145TU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 3A UFM |
![]() |
NTHL040N120SC1Sanyo Semiconductor/ON Semiconductor |
TRANS SJT N-CH 1200V 60A TO247-3 |
![]() |
BB502MBS-TR-ERochester Electronics |
RF N-CHANNEL MOSFET |
![]() |
TK15S04N1L,LXHQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 15A DPAK |
![]() |
IPW65R155CFD7XKSA1IR (Infineon Technologies) |
HIGH POWER_NEW |
![]() |
IPN80R1K4P7Rochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
FCPF600N65S3R0L-F154Sanyo Semiconductor/ON Semiconductor |
POWER SUPERFET MOSFET N-CHANNEL |
![]() |
RJK0389DPA-WS#J53Rochester Electronics |
POWER TRANSISTOR, MOSFET |
![]() |
IRFP460APBFXKMA1IR (Infineon Technologies) |
PLANAR >= 100V |
![]() |
IPB080N03L GRochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
NTBLS1D5N08MCSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 32A/298A 8HPSOF |
![]() |
NTMFS5C646NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 20A/93A 5DFN |