English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
UPA2351T1G(2)-E4-ARochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
|
BUK663R2-40C,118-NEXRochester Electronics |
PFET, 100A I(D), 40V, 0.0057OHM, |
|
|
NVTFS5C478NLTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CHANNEL 40V 26A 8WDFN |
|
|
RJK5020DPK01-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
SSM6K204FE,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 20V 2A ES6 |
|
|
YJJ09N03A-F2-0000HF |
N-CH MOSFET 30V 9A SOT-23-6L |
|
|
RJK1525DPP-MG#T2Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
NTMFS5C673NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 14A/50A 5DFN |
|
|
IRFS254BFP001Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
IPC022N03L3X1SA1Rochester Electronics |
MOSFET N-CH 30V 1A SAWN ON FOIL |
|
|
BUZ73ALINRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
IRF512Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
DMT8008LSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 61V-100V SO-8 |
