English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 50A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 3.8mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 3.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 105 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 6700 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 136W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-PAK (TO-252) |
| 包/箱: | TO-252-4, DPak (3 Leads + Tab) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPB65R090CFD7ATMA1IR (Infineon Technologies) |
HIGH POWER_NEW |
|
|
RSQ025P03HZGTRROHM Semiconductor |
MOSFET P-CH 30V 2.5A TSMT6 |
|
|
IRL510PBF-BE3Vishay / Siliconix |
MOSFET N-CH 100V 5.6A TO220AB |
|
|
SIPC19N80C3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
MTY25N60ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
STB50N65DM6STMicroelectronics |
MOSFET N-CH 650V 33A D2PAK |
|
|
RJK2017DPE-WS#J3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
TPN6R303NC,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 30V 20A 8TSON-ADV |
|
|
RFP17N06LRochester Electronics |
N-CHANNEL, MOSFET |
|
|
RLD03N06CLESM9ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
A2N7002HW-HFComchip Technology |
MOSFET N-CH 60V 300MA SOT323 |
|
|
DMN6069SFGQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 18A POWERDI3333 |
|
|
FDMS0306SRochester Electronics |
1-ELEMENT, N-CHANNEL |
