English
简体中文
TRANS SJT N-CH 1200V 102A TO247
FXPC OM4 SC_DX SC_DX 4M
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | SiC (Silicon Carbide Junction Transistor) |
| 漏源电压 (vdss): | 1200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 102A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 20V |
| rds on (max) @ id, vgs: | 28mOhm @ 60A, 20V |
| vgs(th) (最大值) @ id: | 4.3V @ 20mA |
| 栅极电荷 (qg) (max) @ vgs: | 220 nC @ 20 V |
| vgs (最大值): | +25V, -15V |
| 输入电容 (ciss) (max) @ vds: | 2943 pF @ 800 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 510W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247-4 |
| 包/箱: | TO-247-4 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
BSB165N15NZ3GRochester Electronics |
BSB165N15 - 12V-300V N-CHANNEL P |
|
|
IXTT40N50L2-TRLWickmann / Littelfuse |
MOSFET N-CH 500V 40A TO268 |
|
|
IPL60R225CFD7AUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 12A VSON-4-1 |
|
|
NVMFS5C673NWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 14A/50A 5DFN |
|
|
2SJ609Rochester Electronics |
P-CHANNEL SMALL SIGNAL MOSFET |
|
|
NVMJS1D2N04CLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 41A/237A 8LFPAK |
|
|
NTMYS3D8N04CLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 22A/87A 4LFPAK |
|
|
SIHG15N80AE-GE3Vishay / Siliconix |
MOSFET N-CH 800V 13A TO247AC |
|
|
DMTH6012LPSW-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 11.5/50.5A PWRDI |
|
|
IPN80R2K0P7Rochester Electronics |
IPN80R2K0 - 800V COOLMOS N-CHANN |
|
|
2SK1580(0)-T1-ARochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
|
IRF541Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
SI9426DYRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |