类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Obsolete |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
2SK1587-T1-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
UPA1559H(1)-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
DMN95H2D2HCTIZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 950V 6A ITO220AB |
![]() |
DMP2040UVT-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V TSOT26 |
![]() |
IRF641Rochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
BSF885N03LQ3GXUMA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
IRF611Rochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
TK3R9E10PL,S1XToshiba Electronic Devices and Storage Corporation |
X35 PB-F POWER MOSFET TRANSISTOR |
![]() |
NTMFSC1D6N06CLSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 36A/235A 8DFN |
![]() |
MTD5N25E1Rochester Electronics |
NFET DPAK 250V 1.0R |
![]() |
DMN31D6UT-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 350MA SOT523 |
![]() |
AON6266EAlpha and Omega Semiconductor, Inc. |
MOSFET N-CHANNEL 60V 24A 8DFN |
![]() |
IPL60R160CFD7AUMA1IR (Infineon Technologies) |
MOSFET N CH |