类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
2SK1583-AZRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
![]() |
NTB004N10GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 201A TO263 |
![]() |
BUZ331Rochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
BSF134N10NJ3GRochester Electronics |
BSF134N10 - 12V-300V N-CHANNEL P |
![]() |
SIDR104ADP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 100V 18.8A/81A PPAK |
![]() |
2SJ278MYTRRochester Electronics |
P-CHANNEL POWER MOSFET |
![]() |
NP22N055ILE-E1-AYRochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
FDP2710_SW82258Rochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
2SJ358(0)-T1-AYRochester Electronics |
P-CHANNEL POWER MOSFET |
![]() |
DMJ65H190SCTIZetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 501V-650V ITO-220A |
![]() |
BUZ73AH3046Rochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
H7N0608LS90TLRochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
TK60S10N1L,LXHQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 60A DPAK |