类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101, TrenchMOS™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 600mA (Ta) |
驱动电压(最大 rds on,最小 rds on): | 1.5V, 4.5V |
rds on (max) @ id, vgs: | 1Ohm @ 500mA, 4.5V |
vgs(th) (最大值) @ id: | 950mV @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 900 pC @ 4.5 V |
vgs (最大值): | ±8V |
输入电容 (ciss) (max) @ vds: | 62.2 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 660mW (Ta), 2.23W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | DFN0606-3 (SOT8001) |
包/箱: | 3-XFDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FDMS86181ESanyo Semiconductor/ON Semiconductor |
FET 100V 4.2 MOHM PQFN56 |
|
2SJ586CPTL-ERochester Electronics |
P-CHANNEL MOSFET |
|
4AM14Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
BTS244ZAKSA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
2SJ645-ERochester Electronics |
P-CHANNEL SMALL SIGNAL MOSFET |
|
2SK1160-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
IGT40R070D1E8220ATMA1IR (Infineon Technologies) |
MOSFET N-CH 400V 31A HSOF-8-3 |
|
NTMFS6H848NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 13A/59A 5DFN |
|
NTBS2D7N06M7Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 110A D2PAK-3 |
|
DMP2005UFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 89A POWERDI3333 |
|
2SK1580(0)-T1-ATRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
IRF821Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
BSO080P03NS3 GRochester Electronics |
P-CHANNEL POWER MOSFET |