English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | 24.5A (Ta), 110A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RJK0348DPA-WS#J0Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
IPC60R385CPX1SA1IR (Infineon Technologies) |
MOSFET N-CH BARE DIE |
|
|
IRF448Rochester Electronics |
MOSFET N-CH 500V 7.9A TO204AE |
|
|
DMT3006LFV-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 60A POWERDI3333 |
|
|
PMXB65UPE147Rochester Electronics |
P-CHANNEL MOSFET |
|
|
N0300P-T1B-ATRochester Electronics |
SIGNAL DEVICE |
|
|
SI4884DYRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
NDCTR3065ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 30A SMD |
|
|
2SK974L-ERochester Electronics |
GENERAL SWITCHING POWER MOSFET |
|
|
BSS84AKWRochester Electronics |
NOW NEXPERIA BSS84AKW - SMALL SI |
|
|
IRL60SC216ARMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 324A TO263-7 |
|
|
SPP15N60CFDXKSA1IR (Infineon Technologies) |
LOW POWER_LEGACY |
|
|
PMDPB760EN115Rochester Electronics |
SMALL SIGNAL FET |
