类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 100 V |
电流 - 连续漏极 (id) @ 25°c: | 15A (Ta) |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | 43mOhm @ 7.5A, 10V |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | 21 nC @ 10 V |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | 1450 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-WPAK |
包/箱: | 8-PowerWDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SI6955DQRochester Electronics |
P-CHANNEL MOSFET |
|
IPA034N08NM5SXKSA1IR (Infineon Technologies) |
TRENCH 40<-<100V |
|
NTMFS5C645NLT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 22A/100A 5DFN |
|
6HP04MH-TL-ERochester Electronics |
P-CHANNEL SMALL SIGNAL MOSFET |
|
DMN2120UFCL-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 1.8A 6UDFN |
|
2SK1169-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
MCH6445-TL-ERochester Electronics |
60 V, 4 A, SINGLE N-CHANNEL |
|
NTMJS1D2N04CLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 41A/237A 8LFPAK |
|
NTMFS6H818NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 22A/135A 5DFN |
|
NTD78N03RGRochester Electronics |
N-CHANNEL POWER MOSFET |
|
DMTH6006LPSWQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 17.2A/100A PWRDI |
|
AUIRFP064N-IRRochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
|
RJK2017DPE-00#J3Rochester Electronics |
N-CHANNEL POWER MOSFET |