English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3.6A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 1.5Ohm @ 2.2A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 20 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3400 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Ta), 42W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-251AA |
| 包/箱: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STE53NC50STMicroelectronics |
MOSFET N-CH 500V 53A ISOTOP |
|
|
RJK03H0DPA-00#J5ARochester Electronics |
N-CHANNEL POWER SWITCHING MOSFET |
|
|
IRF442Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
UPA2749UT1A-E2-AYRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
SIPC14N50C3X1SA2IR (Infineon Technologies) |
TRANSISTOR N-CH |
|
|
IRF642Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
TPN7R006PL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 54A 8TSON |
|
|
DMT31M6LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 35.8A PWRDI5060 |
|
|
NTNS2K1P021ZTCGSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 127MA 3XDFN |
|
|
IXTY44N10T-TRLWickmann / Littelfuse |
MOSFET N-CH 100V 44A TO252 |
|
|
SI1079X-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 1.44A SC89-6 |
|
|
IPI045N10N3 GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
UPA2746UT1A-E2-AYRochester Electronics |
N-CHANNEL POWER MOSFET |
