English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 48A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 50mOhm @ 24A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 60 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 3090 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 250W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220 Isolated Tab |
| 包/箱: | TO-220-3 Full Pack, Isolated Tab |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
2SK1584(0)-T1-AZRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
|
NTP055N65S3HSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 47A TO220-3 |
|
|
SIHB17N80AE-GE3Vishay / Siliconix |
MOSFET N-CH 800V 15A D2PAK |
|
|
2SJ471-ERochester Electronics |
POWER MOSFET |
|
|
APTM20DAM08TGRoving Networks / Microchip Technology |
MOSFET N-CH 200V 208A SP4 |
|
|
NTK3043NT1HRochester Electronics |
NFET SOT723 20V 285MA 3.5 |
|
|
RJK03M5DPA-00#J5ARenesas Electronics America |
MOSFET N-CH 30V 30A 8WPAK |
|
|
RJK03A4DPA-00#J53Rochester Electronics |
POWER TRANSISTOR, MOSFET |
|
|
NTTFS5C680NLTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 7.82A/20A 8WDFN |
|
|
2SK1292(02)-S6-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
RF1S45N06LESMRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
UPA2727T1A-E1-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
PMPB15XPRochester Electronics |
PMPB15XP - 12 V, SINGLE P-CHANNE |
