类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 16A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 199mOhm @ 8A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 52.3 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 2170 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 134.4W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220F |
包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
YJG95G06A-F1-0100HF |
N-CH MOSFET 60V 95A PDFN5060-8L- |
|
NVMFS024N06CT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 8A/25A 5DFN |
|
DMP2541UCB9-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 25V 3.9A U-WLB1515-9 |
|
2SK1273(0)-T1-AZRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
2SJ554-90-ERochester Electronics |
P-CHANNEL POWER MOSFET |
|
DMP1070UCA3-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 12V 3.6A X4DSN0607-3 |
|
2SK3705Rochester Electronics |
N-CHANNL SILICON MOSFET FOR GENE |
|
RJK0651DPB-0T#J5Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
2SK1960-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
AONS36306Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 28A/63A 8DFN |
|
RJK0379DPA-00#J53Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
NVMFS6H801NLWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 24A/160A 5DFN |
|
RJK2017DPP-90#T2Rochester Electronics |
N-CHANNEL POWER MOSFET |