RES SMD 215 OHM 0.1% 1W 1206
MEMS OSC XO 19.2000MHZ H/LV-CMOS
CONN HOOD FOR G125-224 10POS
HIGH POWER_NEW
类型 | 描述 |
---|---|
系列: | CoolMOS™ CFD7 |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 650 V |
电流 - 连续漏极 (id) @ 25°c: | 19A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 125mOhm @ 8.5A, 10V |
vgs(th) (最大值) @ id: | 4.5V @ 420µA |
栅极电荷 (qg) (max) @ vgs: | 36 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1694 pF @ 400 V |
场效应管特征: | - |
功耗(最大值): | 98W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | PG-TO247-3 |
包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
2SJ203-L-ARochester Electronics |
P-CHANNEL SMALL SIGNAL MOSFET |
|
IRFP142RRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FCMT360N65S3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 10A 4PQFN |
|
NE5550979A-T1A-ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
SQD50N04_4M5LT4GE3Vishay / Siliconix |
MOSFET N-CH 40V 50A TO252AA |
|
UPA2350BT1G-E4-ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
2SK1299STL-ERochester Electronics |
GENERAL SWITCHING POWER MOSFET |
|
PMH550UPEHNexperia |
MOSFET P-CH 20V 800MA DFN0606-3 |
|
NTD2955-001Rochester Electronics |
MOSFET P-CH 60V 12A DPAK |
|
2SK3058-Z-E1-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
HAF1002-92LRochester Electronics |
P-CHANNEL POWER MOSFET |
|
DMN1023UCB4-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N CH 5.1A U-WLB1010-4 |
|
STMFS5C609NLT1GSanyo Semiconductor/ON Semiconductor |
TRENCHFET 60V N-CH TRENCH |