N-CH MOSFET 30V 30A DFN3333-8L
WBN-1X1/4IN NPT LOCKNUT BR
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DMN6068LK3Q-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 41V 60V TO252 |
|
TK17V65W,LQToshiba Electronic Devices and Storage Corporation |
X35 PB-F POWER MOSFET TRANSISTOR |
|
BUZ30A H3045ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
SSM3J143TU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 5.5A UFM |
|
IRF224Rochester Electronics |
N-CHANNEL HERMETIC MOS HEXFET |
|
SIPC07N50C3X1SA1IR (Infineon Technologies) |
TRANSISTOR N-CH |
|
NTMFS006N08MCSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 9.3A/82A 8PQFN |
|
SQD90P04_9M4LT4GE3Vishay / Siliconix |
MOSFET P-CH 40V 90A TO252AA |
|
UPA2822T1L-E1-ATRenesas Electronics America |
MOSFET N-CH 30V 34A 8HWSON |
|
PMN40UPEA115Rochester Electronics |
P-CHANNEL MOSFET |
|
PSMNR51-25YLHXNexperia |
MOSFET N-CH 25V 380A LFPAK56 |
|
2SK2158-L-ARochester Electronics |
N-CHANNEL MOSFET |
|
BTS244ZE3043Rochester Electronics |
N-CHANNEL POWER MOSFET |