English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 100mA (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | 13Ohm @ 10mA, 10V |
| vgs(th) (最大值) @ id: | 1.7V @ 10µA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | 5 pF @ 3 V |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | Surface Mount |
| 供应商设备包: | SC-75-3, USM |
| 包/箱: | SC-75, SOT-416 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NDCTR20120ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 1200V 20A SMD |
|
|
NTMTS002N08MCSanyo Semiconductor/ON Semiconductor |
PTNG 80V IN CEBU PQFN88 |
|
|
IPC65R070C6X1SA1IR (Infineon Technologies) |
MOSFET N-CH BARE DIE |
|
|
SSM6G18NU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 2A 6UDFN |
|
|
MCQ4407B-TPMicro Commercial Components (MCC) |
MOSFET P-CH 30V 12A 8SOP |
|
|
RFP18N08Rochester Electronics |
N-CHANNEL, MOSFET |
|
|
2SK3668-ZK-E1-AYRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
|
2SK2111-T1-AZRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
|
C3M0065100J-TRWolfspeed - a Cree company |
SICFET N-CH 1000V 35A TO263-7 |
|
|
STFU11N65M2STMicroelectronics |
MOSFET |
|
|
DMN24H3D6S-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 101V-250V SOT23 |
|
|
FS70SM-2#201Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
NVTFWS024N06CTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 7A/24A 8WDFN |
