类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPW65R110CFD7XKSA1IR (Infineon Technologies) |
HIGH POWER_NEW |
|
2SK3573-ZK-E1-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NDS9435Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
UF3C065080T3SUnitedSiC |
MOSFET N-CH 650V 31A TO220-3 |
|
SIHA6N80AE-GE3Vishay / Siliconix |
MOSFET N-CH 800V 5A TO220 |
|
2SJ325-AYRochester Electronics |
P-CHANNEL SMALL SIGNAL MOSFET |
|
UPA2760T1A-E1-ATRochester Electronics |
N-CHANNEL POWER MOSFET |
|
CMS100N03H8-HFComchip Technology |
MOSFET N-CH 30V 100A DFN5X6 |
|
TP65H050WSQATransphorm |
GANFET N-CH 650V 36A TO247-3 |
|
SQD50P08-28-T4_GE3Vishay / Siliconix |
MOSFET P-CH 80V 48A TO252AA |
|
DMP3037LSSQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V~30V SO-8 T&R 2 |
|
RJK03J3DPA-00#J5ARochester Electronics |
N-CHANNEL POWER SWITCHING MOSFET |
|
NVTFS030N06CTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 6A/19A 8WDFN |