IC GATE DRVR LOW-SIDE 8SOIC
SMALL SIGNAL FET
类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
RFD14N06LSM9ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTNS0K8N021ZTCGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 220MA 3XDFN |
|
NTMFS5C670NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 17A/71A 5DFN |
|
STMFS5C628NLT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V |
|
TK380A65Y,S4XToshiba Electronic Devices and Storage Corporation |
X35 PB-F POWER MOSFET TRANSISTOR |
|
IAUT165N08S5N029ATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 165A 8HSOF |
|
SIRA60DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 30V 100A PPAK SO-8 |
|
RFP2N12Rochester Electronics |
N-CHANNEL, MOSFET |
|
NTTFS2D8N04HLTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 24A/104A 8WDFN |
|
SI3453DV-T1-GE3Vishay / Siliconix |
MOSFET P-CHANNEL 30V 3.4A 6TSOP |
|
APTM100DAM90GRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 78A SP6 |
|
BB504CDS-TL-HRochester Electronics |
RF N-CHANNEL MOSFET |
|
DMN2025U-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V-24V SOT23 T&R 3 |