English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
2SJ463A(91)-T1-ARochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
|
IRFBC40RRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
NTLJS4D9N03HTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 9.5A 6PQFN |
|
|
RF1S23N06LESM9ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
RJU003N03FRAT106ROHM Semiconductor |
MOSFET N-CH 30V 300MA UMT3 |
|
|
IRFH5302DTRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 29A/100A PQFN |
|
|
H5N5011PL-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
NVD4810NT4G-VF01Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 9A/54A DPAK |
|
|
IRF631Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
SPI11N65C3INRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
IRFU321Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
IRFIRF7314PBFRochester Electronics |
P-CHANNEL POWER MOSFET |
|
|
NDCTR40120ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 1200V 40A SMD |
