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| 类型 | 描述 |
|---|---|
| 系列: | G3R™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | SiCFET (Silicon Carbide) |
| 漏源电压 (vdss): | 1200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 41A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 15V |
| rds on (max) @ id, vgs: | 90mOhm @ 20A, 15V |
| vgs(th) (最大值) @ id: | 2.69V @ 7.5mA |
| 栅极电荷 (qg) (max) @ vgs: | 54 nC @ 15 V |
| vgs (最大值): | ±15V |
| 输入电容 (ciss) (max) @ vds: | 1560 pF @ 800 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 207W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247-4 |
| 包/箱: | TO-247-4 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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