类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
STFU14N80K5STMicroelectronics |
MOSFET N-CH 800V 12A TO220FP |
|
IRFU222Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTP082N65S3HFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 40A TO220-3 |
|
SQD30N05-20L_T4GE3Vishay / Siliconix |
MOSFET N-CH 55V 30A TO252AA |
|
SCTH50N120-7STMicroelectronics |
PTD WBG & POWER RF |
|
IPP042N03L GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
RJK6013DPP-00#T2Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
SQD50P04-09L_T4GE3Vishay / Siliconix |
MOSFET P-CH 40V 50A TO252AA |
|
TK1K7A60F,S4XToshiba Electronic Devices and Storage Corporation |
X35 PB-F POWER MOSFET TRANSISTOR |
|
STD95P3LLH6AGSTMicroelectronics |
MOSFET N-CH 30V 80A DPAK |
|
NTH4L040N65S3FSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 65A TO247-4 |
|
NTGD3133PT1HRochester Electronics |
PFET TSOP6 20V 2.3A 145MO |
|
UPA1560H(3)-AZRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |