类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NTMFS016N06CT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 10A/33A 5DFN |
|
UF3C065030T3SUnitedSiC |
MOSFET N-CH 650V 85A TO220-3 |
|
UPA2806T1L-E1-AYRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTMTSC1D5N08MCSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 33A/287A 8DFNW |
|
MCB60I1200TZ-TUBWickmann / Littelfuse |
SICFET N-CH 1.2KV 90A TO268AA |
|
NTBLS001N06CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 51A/422A 8HPSOF |
|
IPC302N15N3X7SA1IR (Infineon Technologies) |
MV POWER MOS |
|
IXFH60N65X2-4Wickmann / Littelfuse |
MOSFET N-CH 650V 60A TO247-4L |
|
IPD036N04LGATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 90A TO252-31 |
|
RFP8P06LERochester Electronics |
P-CHANNEL POWER MOSFET |
|
BSM300C12P3E201ROHM Semiconductor |
SICFET N-CH 1200V 300A MODULE |
|
SPU07N60S5INRochester Electronics |
N-CHANNEL POWER MOSFET |
|
N0300N-T1B-ATRochester Electronics |
MOSFET N-CH 30V 4.5A SC96-3 |