类型 | 描述 |
---|---|
系列: | MDmesh™ K5 |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 950 V |
电流 - 连续漏极 (id) @ 25°c: | 3.5A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 2.5Ohm @ 1.5A, 10V |
vgs(th) (最大值) @ id: | 5V @ 100µA |
栅极电荷 (qg) (max) @ vgs: | 12.5 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 220 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 70W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | I-PAK |
包/箱: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
TK3R2A10PL,S4XToshiba Electronic Devices and Storage Corporation |
X35 PB-F POWER MOSFET TRANSISTOR |
|
AOD294AAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 55A TO252 |
|
2SK1095-90-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
NVH4L020N120SC1Sanyo Semiconductor/ON Semiconductor |
TRANS SJT N-CH 1200V 102A TO247 |
|
AOW296Alpha and Omega Semiconductor, Inc. |
MOSFET N-CHANNEL 100V 70A TO262 |
|
NVH4L040N120SC1Sanyo Semiconductor/ON Semiconductor |
TRANS SJT N-CH 1200V 58A TO247-4 |
|
IRF351Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXTH20N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 20A TO247 |
|
APTM50SKM19GRoving Networks / Microchip Technology |
MOSFET N-CH 500V 163A SP6 |
|
SIR820DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 40A PPAK SO-8 |
|
MTD6N10E1Rochester Electronics |
NFET DPAK 100V 0.40R |
|
IXTY48P05T-TRLWickmann / Littelfuse |
MOSFET P-CH 50V 48A TO252 |
|
NDS9400Rochester Electronics |
P-CHANNEL POWER MOSFET |