类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
2SK3225-Z-AZRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
![]() |
NVTFWS016N06CTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 8A/32A 8WDFN |
![]() |
IPC60R280E6X1SA1IR (Infineon Technologies) |
MOSFET N-CH BARE DIE |
![]() |
SIR800DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 20V 50A PPAK SO-8 |
![]() |
DMN6040SK3Q-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 41V-60V TO252 T&R |
![]() |
RQK0604IGDQA#H1Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
![]() |
PMK50XP518Rochester Electronics |
P-CHANNEL POWER MOSFET |
![]() |
NTD4815NT4HRochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
NVTFS6H888NLTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 4.9A/14A 8WDFN |
![]() |
2SK2111-D-T1-AZRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
![]() |
TK5R3A06PL,S4XToshiba Electronic Devices and Storage Corporation |
X35 PB-F POWER MOSFET TRANSISTOR |
![]() |
MTD12N06EZLRochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
IRFD121Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |