类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
IPA60R360P7SE8228XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 9A TO220 |
![]() |
IPL60R095CFD7AUMA1IR (Infineon Technologies) |
MOSFET N CH |
![]() |
2SK1334BY90TR-ERochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
BSB280N15NZ3GRochester Electronics |
BSB280N15 - 12V-300V N-CHANNEL P |
![]() |
UPA2200T1M-T2-ATRochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
STWA40N60M2STMicroelectronics |
MOSFET N-CHANNEL 600V 34A TO247 |
![]() |
FDMS0355SRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
![]() |
NDCTR30120ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 1200V 30A SMD |
![]() |
IXTT11P50-TRLWickmann / Littelfuse |
MOSFET P-CH 500V 11A TO268 |
![]() |
4AK17-91Rochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
DMN6040SE-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 41V 60V SOT223 T&R |
![]() |
IRFF111Rochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
BSM300C12P3E301ROHM Semiconductor |
SICFET N-CH 1200V 300A MODULE |