类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
N0604N-S19-AYRenesas Electronics America |
MOSFET N-CH 60V 82A TO220 |
![]() |
IRF9542Rochester Electronics |
P-CHANNEL POWER MOSFET |
![]() |
BSS84WTSC (Taiwan Semiconductor) |
-60, -0.14, SINGLE P-CHANNEL |
![]() |
SI4936DYRochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
IRFD321Rochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
2SK680A-T2-AZRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
![]() |
IPD80P03P4L07ATMA2IR (Infineon Technologies) |
MOSFET P-CH 30V 80A TO252-31 |
![]() |
APTM100UM65SCAVGRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 145A SP6 |
![]() |
ON5452518Rochester Electronics |
NOW NEXPERIA ON5452 - RF MOSFET |
![]() |
NVATS4A101PZT4GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CHANNEL 30V 27A ATPAK |
![]() |
DMG3414UQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 4.2A SOT23-3 |
![]() |
FDMS007N08LCSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 14A/84A 8PQFN |
![]() |
2SJ213-T1-AZRochester Electronics |
P-CHANNEL POWER MOSFET |