English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 10.5A (Ta), 54A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 12.2mOhm @ 14A, 10V |
| vgs(th) (最大值) @ id: | 2.2V @ 282µA |
| 栅极电荷 (qg) (max) @ vgs: | 19 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 13380 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3W (Ta), 79W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 5-DFN (5x6) (8-SOFL) |
| 包/箱: | 8-PowerTDFN, 5 Leads |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NEM090603M-28-ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
2SJ133-Z-E1-AZRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
|
NTPF190N65S3HFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 20A TO220FP |
|
|
3SK317ZR-TL-ERochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
|
NTTFSC4937NTAGRochester Electronics |
MOSFET N-CH 30V 50A U8FL |
|
|
APTC60SKM24CT1GRoving Networks / Microchip Technology |
MOSFET N-CH 600V 95A SP1 |
|
|
BSF110N06NT3GXUMA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
RFP6N45Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
SQJQ144AE-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 575A PPAK 8 X 8 |
|
|
RJK6014DPP-00#T2Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
2SK2054-D-T2-AZRochester Electronics |
N-CHANNEL MOSFET |
|
|
IRFP352Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
2SK1589-T2B-ARochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
