English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, TrenchMOS™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 1.2A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.5V, 4.5V |
| rds on (max) @ id, vgs: | 310mOhm @ 700mA, 4.5V |
| vgs(th) (最大值) @ id: | 950mV @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 950 pC @ 4.5 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 41 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 360mW (Ta), 2.23W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DFN0606-3 (SOT8001) |
| 包/箱: | 3-XFDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTMFS4C025NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 20A/69A 5DFN |
|
|
BSC004NE2LS5ATMA1IR (Infineon Technologies) |
TRENCH <= 40V |
|
|
2N7002A-F2-0000HF |
N-CH MOSFET 60V 0.34A SOT-23-3L |
|
|
SQJ138EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 330A PPAK SO-8 |
|
|
TP65H150LSGTransphorm |
GANFET N-CH 650V 15A 3PQFN |
|
|
UPA2804T1L-E2-ATRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
MCB90N12-TPMicro Commercial Components (MCC) |
N-CHANNEL MOSFET, D2-PAK |
|
|
SPI16N50C3INRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
RJK03K5DPA-00#J5ARochester Electronics |
N-CHANNEL POWER SWITCHING MOSFET |
|
|
BTS244ZE3062ANTMA1Rochester Electronics |
BTS244 - TEMPFET, AUTOMOTIVE LOW |
|
|
NVMFSC0D9N04CLSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 50A/316A 8DFN |
|
|
NTP360N80S3ZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 13A TO220-3 |
|
|
NVTP2955GRochester Electronics |
MOSFET 60V 12A 196 |
