English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
2SK3306(3)-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
NTP15N06AVRochester Electronics |
NFET T0220 60V 0.12R |
|
|
TK25S06N1L,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 25A DPAK |
|
|
FS10ASJ-06F-T13#X3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
FS25SM-9A#B10Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
BUK9M5R2-30E115Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
NTMFS4C10NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CHANNEL 30V 46A 5DFN |
|
|
IPC50R045CPX1SA1IR (Infineon Technologies) |
MOSFET N-CH BARE DIE |
|
|
HAT2198WP-EL-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
NVTFS5C453NLTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 107A 8WDFN |
|
|
DMPH2040UVTQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 5.6/11.7A TSOT26 |
|
|
MCG04N10A-TPMicro Commercial Components (MCC) |
MOSFET N-CH 100V 4A DFN3030-8 |
|
|
IPD90N06S4-07ATMA2Rochester Electronics |
N-CHANNEL POWER MOSFET |
