类型 | 描述 |
---|---|
系列: | TrenchFET® Gen IV |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 40 V |
电流 - 连续漏极 (id) @ 25°c: | 100A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 0.88mOhm @ 20A, 10V |
vgs(th) (最大值) @ id: | 2.3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 204 nC @ 10 V |
vgs (最大值): | +20V, -16V |
输入电容 (ciss) (max) @ vds: | 10500 pF @ 20 V |
场效应管特征: | - |
功耗(最大值): | 104W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerPAK® SO-8 |
包/箱: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
H7N0608LS90TL-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPB108N15N3GRochester Electronics |
IPB108N15 - 12V-300V N-CHANNEL P |
|
DMT4011LFG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 30A POWERDI3333 |
|
STL10HN65M2STMicroelectronics |
POWER MOSFET |
|
TK49N65W5,S1FToshiba Electronic Devices and Storage Corporation |
X35 PB-F POWER MOSFET TRANSISTOR |
|
NVBLS0D5N04CTXGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 65A/300A 8HPSOF |
|
IRF613Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
MCAC130N04-TPMicro Commercial Components (MCC) |
N-CHANNEL MOSFET, DFN5060 |
|
IPP60R190C3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
DMG1013TQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 460MA SOT523 |
|
NVMFS5C628NWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 28A/150A 5DFN |
|
UPA1524H-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXTY18P10T-TRLWickmann / Littelfuse |
MOSFET P-CH 100V 18A TO252 |