类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | - |
技术: | SiCFET (Silicon Carbide) |
漏源电压 (vdss): | 1700 V |
电流 - 连续漏极 (id) @ 25°c: | 68A (Tc) |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | Through Hole |
供应商设备包: | TO-247 |
包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
RD3S100AAFRATLROHM Semiconductor |
MOSFET N-CH 190V 10A TO252 |
|
AON6380Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 24V 8DFN |
|
IPC60R190E6X1SA1IR (Infineon Technologies) |
MOSFET N-CH BARE DIE |
|
IPP100N18N3GXKSA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
STU6N60DM2STMicroelectronics |
MOSFET N-CH 600V 5A IPAK |
|
RFG75N05ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
EFC4611-TRRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTMFS4C10NAT1GRochester Electronics |
MOSFET N-CH 30V 8.2A SO8FL |
|
DMN10H220LQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 1.6A SOT23-3 |
|
2SK3480-S12-AZRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
DMP2110U-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 3.5A SOT23 |
|
SIPC69SN60C3X3SA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
DMN2025U-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V-24V SOT23 T&R 1 |