English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.8 V, 4V |
| rds on (max) @ id, vgs: | 120mOhm @ 1A, 4V |
| vgs(th) (最大值) @ id: | 1.1V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | ±10V |
| 输入电容 (ciss) (max) @ vds: | 300 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 540mW (Ta) |
| 工作温度: | 125°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | WSSMini6-F1 |
| 包/箱: | 6-SMD, Flat Leads |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPL60R060CFD7AUMA1IR (Infineon Technologies) |
MOSFET N CH |
|
|
TK31Z60X,S1FToshiba Electronic Devices and Storage Corporation |
X35 PB-F POWER MOSFET TRANSISTOR |
|
|
PMPB25ENEA115Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
|
MAX8585EUARochester Electronics |
MAX8585 ORING MOSFET CONTROLLER |
|
|
IPB0401NM5SATMA1IR (Infineon Technologies) |
TRENCH >=100V |
|
|
IRFP362Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
2SJ208-T1-AZRochester Electronics |
P-CHANNEL POWER MOSFET |
|
|
FDBL9401-F085T6Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 58.4/240A 8HPSOF |
|
|
5HN01C-TB-HSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 50V 100MA SMD |
|
|
FS100KMJ-03F#B00Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
IPB65R099CFD7AATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 24A TO263-3 |
|
|
CPH6350-P-TL-ERochester Electronics |
MOSFET P-CH 30V 6A CPH6 |
|
|
SIHA11N80AE-GE3Vishay / Siliconix |
MOSFET N-CH 800V 8A TO220 |
