English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TK7R7P10PL,RQToshiba Electronic Devices and Storage Corporation |
X35 PB-F POWER MOSFET TRANSISTOR |
|
|
NX7002BKXB147Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
|
IXTY02N50D-TRLWickmann / Littelfuse |
MOSFET N-CH |
|
|
IRFF9131Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
|
DMN3110LCP3-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 3.2A 3DFN |
|
|
NTMFS024N06CT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 8A/25A 5DFN |
|
|
TK1R4S04PB,LXHQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 120A DPAK |
|
|
HUF76122P3Rochester Electronics |
HUF76122P3 |
|
|
SIPC03N60C3X1SA1IR (Infineon Technologies) |
TRANSISTOR N-CH |
|
|
2SJ403Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
|
RFM10N50Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
NVTFWS9D6P04M8LTAGSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 40V 13A/64A 8WDFN |
|
|
NDCTR4065ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 40A SMD |
