English
简体中文
RELAY GEN PURPOSE SPDT 1A 5VDC
MOSFET N-CHANNEL 600V 9A TO220F
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 9A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 385mOhm @ 4.5A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 29 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 1240 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 83.3W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220F |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
2SK2552C-T1-ARochester Electronics |
N-CHANNEL SMALL SIGNAL MOSFET |
|
|
MSC080SMA120B4Roving Networks / Microchip Technology |
TRANS SJT N-CH 1200V 37A TO247-4 |
|
|
DMNH4006SPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 31V-40V POWERDI506 |
|
|
BSM180C12P3C202ROHM Semiconductor |
SICFET N-CH 1200V 180A MODULE |
|
|
FQ7N10Sanyo Semiconductor/ON Semiconductor |
DIE MOSFET N-CH 100V |
|
|
MCAC68N03Y-TPMicro Commercial Components (MCC) |
N-CHANNEL MOSFET, DFN5060 |
|
|
2SK3484-S16-AYRochester Electronics |
SMALL SIGNAL MOSFET |
|
|
FDB8442-F085-FSRochester Electronics |
28A, 40V, 0.0029OHM, N-CHANNEL, |
|
|
NTMTSC002N10MCTXGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 45A/236A 8TDFNW |
|
|
SPD15P10P GRochester Electronics |
P-CHANNEL POWER MOSFET |
|
|
PMZ420UNYLNexperia |
MOSFET N-CH |
|
|
BSC882N03LS GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
IPC60R380E6X1SA1IR (Infineon Technologies) |
MOSFET N-CH BARE DIE |