English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTHL019N65S3HSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 75A TO247-3 |
|
|
FDPF2D3N10CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 222A TO220F |
|
|
NVMFSC1D6N06CLSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 35A/224A 8DFN |
|
|
2SK2499-S-AZRochester Electronics |
DISCRETE / POWER MOSFET |
|
|
SIPC14N80C3X1SA2IR (Infineon Technologies) |
TRANSISTOR N-CH |
|
|
NTMTS0D7N04CLTXGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 67A/433A 8DFNW |
|
|
2SJ325-Z-E1-AYRochester Electronics |
P-CHANNEL SMALL SIGNAL MOSFET |
|
|
BUK7506-55A127Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
RJK03K1DPA-00#J5ARochester Electronics |
N-CHANNEL POWER SWITCHING MOSFET |
|
|
IRF532Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
TK099V65Z,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 30A 5DFN |
|
|
BST113ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
NTMFS4C054NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 22.5A/80A 5DFN |
