English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 170A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V, 15V |
| rds on (max) @ id, vgs: | 9mOhm @ 85A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 198 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 6000 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 715W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-268 |
| 包/箱: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MCH3478-TL-W-ZSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 1.6A SC-70FL |
|
|
NTHL040N65S3HFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 65A TO247-3 |
|
|
IPC60R520E6X1SA1IR (Infineon Technologies) |
MOSFET N-CH BARE DIE |
|
|
SVD5865NLT4GRochester Electronics |
60V 0.019OHM N-CHANNEL MOSFET |
|
|
TPIC5223LDRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
|
2SK3991-ZK-E1-AZRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
|
RJK5026DPP-V0#T2Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
SPU03N60S5Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
BSC042NE7NS3 GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
IXTT140N10P-TRLWickmann / Littelfuse |
MOSFET N-CH 100V 140A TO268 |
|
|
APTM100UM60FAGRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 129A SP6 |
|
|
IXTT38N30L2HVWickmann / Littelfuse |
MOSFET N-CH 300V 38A TO268HV |
|
|
MSC035SMA070B4Roving Networks / Microchip Technology |
TRANS SJT N-CH 700V 77A TO247-4 |
