类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
2SK2935-93-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPT019N08N5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 32A/247A 8HSOF |
|
FDC013P20LSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V TSOT23-6 |
|
UPA2592T1H-T1-ATRochester Electronics |
N-CHANNEL POWER MOSFET |
|
RJK03M2DPA-00#J5ARenesas Electronics America |
MOSFET N-CH 30V 45A 8WPAK |
|
TK110P10PL,RQToshiba Electronic Devices and Storage Corporation |
X35 PB-F POWER MOSFET TRANSISTOR |
|
IXTF6N200P3Wickmann / Littelfuse |
MOSFET N-CH 2000V 4A I4PAC |
|
SIHA21N80AE-GE3Vishay / Siliconix |
MOSFET N-CH 800V 7.5A TO220 |
|
BSD816SN L6327Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
RRS040P03FRATBROHM Semiconductor |
MOSFET P-CH 30V 4A 8SOP |
|
NVMJS1D7N04CTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 35A/185A 8LFPAK |
|
NVD5490NLT4G-VF01Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 5A/17A DPAK |
|
RJK03P3DPA-00#J5ARochester Electronics |
N-CHANNEL POWER MOSFET |