PFET, 27A I(D), 150V, 0.15OHM, 1
HDM 8SMPR042F055F G
类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NVBLS0D7N06CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 54A/470A 8HPSOF |
|
2SK974-93L-ERochester Electronics |
GENERAL SWITCHING POWER MOSFET |
|
RFM15N05LRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPN70R1K0CEATMA1IR (Infineon Technologies) |
MOSFET N-CH 750V 7.4A SOT223 |
|
NVMTS001N06CTXGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 53.7A/376A 8DFNW |
|
STD13N50DM2AGSTMicroelectronics |
POWER TRANSISTORS |
|
FW905-TL-ERochester Electronics |
P-CHANNEL SILICON MOSFET |
|
RF1S30P06SMRochester Electronics |
P-CHANNEL POWER MOSFET |
|
PMV48XPVLNexperia |
MOSFET P-CH 20V 3.5A TO236AB |
|
NTTFS6H860NLTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 8.1A/30A 8WDFN |
|
2SK1838S-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
CPC3730CTRWickmann / Littelfuse |
MOSFET N-CH 350V SOT89 |
|
BSS215P H6327Rochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |