类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 21A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 197mOhm @ 11A, 10V |
vgs(th) (最大值) @ id: | 5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 74 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 1690 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 227W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-247AC |
包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DMP1022UWS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 12V 7.2A 8DFN |
|
TK40S06N1L,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 40A DPAK |
|
IXTY1N80P-TRLWickmann / Littelfuse |
MOSFET N-CH 800V 1A TO252 |
|
RJK03C5DPA-WS#J5ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
2SK1636STR-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
RF1S45N03LRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FMD47-06KC5Wickmann / Littelfuse |
MOSFET N-CH 600V 47A I4PAC |
|
FDB9509L-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET 40V 110X72 MIL DPAK |
|
NX2020N2115Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
DMP6250SFDF-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 41V-60V U-DFN2020- |
|
SSM5H16TU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 1.9A UFV |
|
NTMFS6H864NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 7A/22A 5DFN |
|
RF1S22N10Rochester Electronics |
N-CHANNEL POWER MOSFET |