类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 100A |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | 2.9mOhm @ 20A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 43 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 2559 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 35W |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | DFN5060 |
包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IMZ120R220M1HXKSA1IR (Infineon Technologies) |
SICFET N-CH 1.2KV 13A TO247-4 |
|
RJK03P6DPA-00#J5ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
2SK1094-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
NDH8302PRochester Electronics |
P-CHANNEL MOSFET |
|
NTBLS0D7N06CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 54A/470A 8HPSOF |
|
MKE38P600LB-TRRWickmann / Littelfuse |
MOSFET N-CH 600V 50A SMPD |
|
NTMFS4C029NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 15A/46A 5DFN |
|
IPC300N15N3RX2MA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTTFS2D1N04HLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 24A/150A 8PQFN |
|
SSM6K208FE,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 1.9A ES6 |
|
RJK03C0DPA-WS#J53Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
RJK0346DPA-WS#J0Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
RJK2017DPP-00#T2Rochester Electronics |
N-CHANNEL POWER MOSFET |