English
简体中文
FIXED IND 10UH 4.2A 35MOHM SMD
MOSFET N-CH 60V 4.8A 9WLCSP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 4.8A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 41mOhm @ 3A, 10V |
| vgs(th) (最大值) @ id: | 1.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 45 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1160 pF @ 30 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 780mW (Ta), 12.5W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 9-WLCSP (1.48x1.48) |
| 包/箱: | 9-XFBGA, WLCSP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
2N6895Rochester Electronics |
P-CHANNEL, MOSFET |
|
|
NVTFS8D1N08HTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CHANNEL 80V 61A |
|
|
IPC30S2SN08NX2MA1Rochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |
|
|
SIA430DJT-T4-GE3Vishay / Siliconix |
MOSFET N-CH 20V 12A/12A PPAK |
|
|
DMT32M5LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 150A PWRDI5060-8 |
|
|
DMN67D8LT-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 41V 60V SOT523 T&R |
|
|
NVMFS6H824NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 20A/110A 5DFN |
|
|
TPN2R503NC,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 30V 40A 8TSON-ADV |
|
|
TK2K2A60F,S4XToshiba Electronic Devices and Storage Corporation |
X35 PB-F POWER MOSFET TRANSISTOR |
|
|
2SK681A-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
FDB1D7N10CL7Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 268A D2PAK |
|
|
NVBGS4D1N15MCSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 20A/185A D2PAK |
|
|
RJK03J5DNS-00#J5Rochester Electronics |
N-CHANNEL POWER SWITCHING MOSFET |